Raman Scattering from Solid-State Plasmas

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Abstract
A microscopic calculation of the Raman scattering process in almost transparent semiconductors is presented. The calculation takes into account band structure, phonons, and the collective motions of the conduction electrons. It is based on many-body perturbation theory and is "valid" within the framework of the random-phase approximation. Our results show resonance scattering from the coupled collective modes of the conduction-electron longitudinal-optic-mode system. The detailed effect of the band structure manifests itself in determining the intensity of the resonance lines.