Effects of low level boron doping of the i-layer on the performance of SiC p-i-n devices

This publication has 5 references indexed in Scilit:

• Determination of carrier collection length and prediction of fill factor in amorphous silicon solar cells
  Applied Physics Letters, 1984
• Effect of boron doping and its profile on characteristics of p-i-n a-Si:H solar cells
  Solar Energy Materials, 1983
• Theory and experiment on the surface-photovoltage diffusion-length measurement as applied to amorphous silicon
  Journal of Applied Physics, 1983
• Collection length of holes in a-Si:H by surface photovoltage using a liquid Schottky barrier
  Applied Physics Letters, 1982
• Mechanism of the Formation of Donor States in Heat-Treated Silicon
  Physical Review B, 1958