Strain Sensitivity of MOSFET Devices
- 1 January 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 26 (4) , 424-425
- https://doi.org/10.1109/TIM.1977.4314594
Abstract
In this paper experimental results are presented on deformation effects in silicon MOSFET devices for temperatures ranging from -20 to 100°C. The high sensitivity and the low temperature dependence of the electrical characteristics are discussed in view the use of these devices in pressure transducers.Keywords
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