Application of ion-assisted deposition using a gridless end-Hall ion source for volume manufacturing of thin film optical filters
- 4 November 1994
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 2253, 374-394
- https://doi.org/10.1117/12.192111
Abstract
A wide variety of thin-film materials (TiO2, SiO2, Al2O3, HfO2, Ta2O5, ITO, Y2O3, CeO2, Si3N4, ZrO2, Au, Ag, and MgF2) were deposited using conventional electron beam and thermal evaporation techniques with a concomitant bombardment of energetic oxygen ions from a gridless end-Hall ion source. The oxygen-ion-assisted deposition was performed with an ion-beam current of approximately one Ampere over a range of 40 to 120 eV, providing a uniform ion current density (.3 to .5 mA/cm2) impinging on a large substrate area (5024 cm2). Compared to film deposited using standard gridded ion sources this process produces optically equivalent materials with a broad ion beam which is well suited for volume manufacturing.Keywords
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