Band structure of InGaAs
- 1 July 1989
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 7 (4) , 2525-2531
- https://doi.org/10.1116/1.575791
Abstract
The valence-band structure of unstrained In0.27Ga0.73As grown as a 4000-Å-thick overlayer on GaAs, has been determined in the (001) direction from angle-resolved photoemission data. The InGaAs bands lie between the bands of InAs and GaAs but the differences depend on k. The potential in the alloy is therefore not a simple average of that of the constituent compounds.Keywords
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