Negative resistance and hysteresis in a germanium-silicon heterojunction

• 1 June 1963
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
• Vol. 51  (6) , 946
• https://doi.org/10.1109/PROC.1963.2344

Abstract

Keywords

• HYSTERESIS
• GERMANIUM SILICON ALLOYS
• SILICON GERMANIUM
• HETEROJUNCTIONS
• P-I-N DIODES
• SEMICONDUCTOR DIODES
• FREQUENCY
• TEMPERATURE
• BREAKDOWN VOLTAGE
• IONIZATION