High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide
Top Cited Papers
- 13 September 2012
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 20 (20) , 22224-22232
- https://doi.org/10.1364/oe.20.022224
Abstract
We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm2, an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy efficient modulator is a key building block for optical interconnection applications.Keywords
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