1.5 μm phase adjusted active distributed reflector laser for complete dynamic single-mode operation

10 May 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (10) , 391-393
https://doi.org/10.1049/el:19840271

Abstract

1.5 μm GaInAsP/InP phase adjusted active distributed reflector laser was proposed and fabricated for stable dynamic single-mode operation. Room-temperature CW operation was obtained with the threshold current of 62 mA. Oscillation at the Bragg wavelength was confirmed experimentally.

Keywords

CW OPERATION
SEMICONDUCTOR JUNCTION LASER
GAINASP/INP PHASE ADJUSTED ACTIVE DISTRIBUTED REFLECTOR LASER
THRESHOLD CURRENT 62 MA
WAVELENGTH 1.5 MICRONS
DYNAMIC SINGLE-MODE OPERATION
BRAGG WAVELENGTH OSCILLATION