Hot-carrier-induced degradation in p-channel LDD MOSFET's
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (1) , 5-7
- https://doi.org/10.1109/edl.1986.26273
Abstract
When the p-channel MOSFET is stressed near the maximum substrate current Isub, the lifetime t (5-percent increase in the transconductance) followstI_{sub} = A(I_{sub}/I_{d})^{-n}, with n = 2.0. A simple electron trapping model is proposed to explain the observed power law relationship. The current ratioI_{sub}/I_{d}and the maximum channel electric field decrease with increasing stress time, which is consistent with electron trapping in the oxide during the stress.Keywords
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