Electrical conductivity measurements on amorphous semiconductors of the system (As2Se3)1-x : (Tl2Se) x

Publisher Website
Google Scholar
Abstract
In this paper d.c. conductivity measurements of the bulk samples of chalcogenide glasses of the system (As2Se3)1-x : (Tl2Se) x , with x = 0, 0·125, 0·25, 0·375 and 0·5, are reported. Evaporated gold electrodes in the sandwich geometry were used. The results are interpreted in terms of the model proposed by Mott and Davis (1979). The activation energy for As2Se3 was determined to be 0·91 ± 0·02 eV, and this decreases with the addition of Tl2Se. For TlAsSe2 (x = 0·5) glass, the activation energy was found to be 0·64 ± 0·02 eV. The room-temperature conductivity of As2Se3 (1·12 ± 1·0 × 10−12 ω−1 cm−1) was found to increase with increasing Tl2Se concentration, reaching 5 × 10−8 ω−1 cm−1 for TlAsSe2.