Surface passivation of GaAs with ultrathin Si3N4/Si interface control layer formed by MBE and in situ ECR plasma nitridation
- 1 January 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 123-124, 599-602
- https://doi.org/10.1016/s0169-4332(97)00576-x
Abstract
No abstract availableKeywords
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