Electrical properties of n-type ZnSe:I and ZnSe:I:In single crystals

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Abstract
The electrical properties of n-type ZnSe single crystals doped with iodine during growth and subsequently diffused with indium have been analysed in the temperature range between 140K and 500K. It is shown that the double-impurity doping with 7.0*1024 m-3 indium content and 8.0*1024 m-3 iodine content does not make the material strongly degenerate. A broad impurity band is formed in the vicinity of (from the conduction band edge) 31 meV to 14 meV for the Zn-treated samples, and 30 meV to 4 meV for the samples subsequently doped with Zn-In. The mobility of the carriers is limited mainly by optical polar scattering at temperatures above 400K, and by ionised impurity scattering at lower temperatures.

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