ONO technology
- 1 October 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 39 (1-4) , 178-191
- https://doi.org/10.1016/0169-4332(89)90432-7
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Impact of copper contamination on the quality of silicon oxidesJournal of Applied Physics, 1989
- Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuitsIEEE Electron Device Letters, 1988
- Influences of Processing Chemistry of Silicon Nitride Films on the Charge Trapping Behavior of Oxide/CVD‐Nitride/Oxide CapacitorsJournal of the Electrochemical Society, 1988
- Interfacial tunneling barrier heights in triple-layer dielectricsApplied Surface Science, 1987
- Ultra-thin Ta2O5dielectric film for high-speed bipolar memoriesIEEE Transactions on Electron Devices, 1987
- Chemical and electronic structure of the SiO2/Si interfaceMaterials Science Reports, 1986
- Hydrogen-related memory traps in thin silicon nitride filmsJournal of Vacuum Science & Technology A, 1983
- The Oxidation of Shaped Silicon SurfacesJournal of the Electrochemical Society, 1982
- Thermal Oxidation Rate of a Si3N4Film and Its Masking Effect against Oxidation of SiliconJapanese Journal of Applied Physics, 1978