Current Transport in Doped Polycrystalline Silicon

• 1 April 1980
• journal article
• Published by IOP Publishing in Japanese Journal of Applied Physics
• Vol. 19  (4) , 665-673
• https://doi.org/10.1143/jjap.19.665

Abstract

Keywords

• PHOSPHORUS
• ENERGY GAP
• ELECTRON DENSITY
• GRAIN BOUNDARY