Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
- 27 March 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (14) , 1860-1862
- https://doi.org/10.1063/1.126192
Abstract
Thick hydride vapor phase epitaxy GaN layers have been grown on a-plane sapphire using high-temperature ion-assisted reactively sputtered AlN as a buffer layer. Transmission electron microscopy and atomic force microscopy were carried out to study the formation of the two interfaces sapphire/AlN and AlN/GaN, and their influence on the microstructure of both the buffer layer and the main GaN layer. It was demonstrated that the high-temperature reactively sputtered buffer layer provides a good alternative for hydride vapor phase epitaxy growth of GaN layers. In particular, the buffer promotes a specific interface ordering mechanism different from that observed on low-temperature buffers.Keywords
This publication has 14 references indexed in Scilit:
- Enhanced quality of epitaxial AlN thin films on 6H–SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter depositionApplied Physics Letters, 2000
- Epitaxy of Gallium Nitride by HVPE Using Low Temperature Intermediate Buffer Layers Deposited by MOVPEPhysica Status Solidi (a), 1999
- Dislocation generation in GaN heteroepitaxyJournal of Crystal Growth, 1998
- Structure of GaN films grown by hydride vapor phase epitaxyApplied Physics Letters, 1997
- Growth of thick gan films on rf sputtered ain buffer layer by hydride vapor phase epitaxyJournal of Electronic Materials, 1997
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995
- The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphireJournal of Electronic Materials, 1995
- Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPEJournal of Crystal Growth, 1991
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986