Monolithic microwave gallium arsenide FET oscillators
- 1 February 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (2) , 158-162
- https://doi.org/10.1109/T-ED.1981.20303
Abstract
Results of the first monolithic microwave GaAs FET oscillator [1] are presented. The oscillator design philosophy is outlined. Design procedures for the oscillator and techniques for realization of various circuit components on the semi-insulating GaAs substrate are indicated. Performance of the oscillator is described and commented upon.Keywords
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