Diffuse interface in Si (substrate)-Au (evaporated film) system
- 15 April 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (8) , 389-390
- https://doi.org/10.1063/1.1654685
Abstract
When a goldfilm is vacuum evaporated at around 50 °C onto a clean surface of single‐crystal silicon substrate, the adhesion of the film to the substrate is very strong, which suggests that some chemical reaction has taken place at the interface. Present study by Auger electron spectroscopy(AES) concludes the occurrence of the above reaction which induces a diffuse interface region in order to relax (or minimize) the interface energy. For the relaxation of silicon (110) and (111) interfaces, at least 45 and 20 monolayers of gold are necessary, respectively. The phase of the thus‐formed interface is concluded to be similar to that of the nonequilibrium solid alloy obtained by quenching from a solid Si–Au eutectic liquid.Keywords
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