Twin boundaries and stacking faults in silicon
- 31 May 1965
- journal article
- other
- Published by Elsevier in Acta Metallurgica
- Vol. 13 (5) , 555-559
- https://doi.org/10.1016/0001-6160(65)90108-2
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Stacking Fault Nucleation in Epitaxial Silicon on Variously Oriented Silicon SubstratesJournal of Applied Physics, 1964
- The influence of twin structure on growth directions in dendritic ribbons of materials having the diamond or zinc-blende stucturesJournal of Physics and Chemistry of Solids, 1963
- Epitaxial Silicon Films by the Hydrogen Reduction of SiCl[sub 4]Journal of the Electrochemical Society, 1961
- Germanium Dendrite StudiesJournal of the Electrochemical Society, 1961
- Propagation Mechanism of Germanium DendritesJournal of Applied Physics, 1960
- On the growth of germanium dendritesActa Metallurgica, 1960
- A Comparison of Etching and Fracturing Techniques for Studying Twin Structures in Ge, Si, and III–V Intermetallic CompoundsJournal of the Electrochemical Society, 1960
- Dendritic Growth of Germanium CrystalsPhysical Review B, 1959
- Dislocations in the diamond latticeJournal of Physics and Chemistry of Solids, 1958
- Birefringence and twinning in siliconActa Metallurgica, 1956