Raman studies of the Zn acceptor in GaP
- 14 August 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (15) , 2957-2966
- https://doi.org/10.1088/0022-3719/10/15/028
Abstract
The Raman spectrum of the Zn acceptor in GaP is examined under applied magnetic fields and uniaxial stress. The relative intensity and Zeeman splitting of the prominent B-line are not consistent with previous conjectures that it is the transition between the acceptor ground states associated with the P3/2 and P1/2 valence-band maxima. An alternative interpretation of this feature based on the coupling of the acceptor bound states of the two bands by the acceptor impurity potential is suggested.Keywords
This publication has 20 references indexed in Scilit:
- Vibronic and impurity-induced Raman scattering from a Jahn-Teller—distorted impurityPhysical Review B, 1975
- Elastic constants and lattice anharmonicity of GaSb and GaP from ultrasonic-velocity measurements between 4.2 and 300 KPhysical Review B, 1975
- Cubic contributions to the spherical model of shallow acceptor statesPhysical Review B, 1974
- Transmission Raman scattering from phonons and electronic impurity levels in Ge at 2 μmPhysical Review B, 1974
- Spherical Model of Shallow Acceptor States in SemiconductorsPhysical Review B, 1973
- Raman Scattering and Photoluminescence in Boron-Doped and Arsenic-Doped SiliconPhysical Review B, 1973
- Electronic structure of ground and excited states of isoelectronic trapsJournal of Luminescence, 1970
- Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eVJournal of Applied Physics, 1967
- Spin and combined resonance on acceptor centres in Ge and Si type crystals—IJournal of Physics and Chemistry of Solids, 1963
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955