Preparation and Properties of Noncrystalline Zinc Oxide Films

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Abstract
Noncrystalline films of zinc oxide have been formed by reactively sputtering zinc metal onto a low‐temperature substrate in an oxygen‐argon atmosphere. The structural state of the films is determined by the temperature of the condensing substrate, and noncrystalline films formed at low substrate temperatures crystallize on heating to 75°–100°C in air or vacuum. A change in optical absorption corresponds to an increase in band gap energy for the crystalline to noncrystalline transition; this is interpreted as resulting from the change in dielectric constant occurring for the same transition. A large reduction in electrical conductivity observed for the noncrystalline material is believed to result mainly from reduced carrier concentration.

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