The current-voltage characteristics of field-effect transistors with short channels
- 31 July 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 19 (5) , 471-473
- https://doi.org/10.1016/0038-1098(76)91193-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Non−Ohmic electron conduction in silicon surface inversion layers at low temperaturesJournal of Applied Physics, 1975
- Energy relaxation of electrons in the (100) n-channel of a Si-MOSFET: II. Surface phonon treatmentSurface Science, 1974
- Warm and hot carriers in silicon surface-inversion layersPhysical Review B, 1974
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Drift-Velocity Saturation of Holes in Si Inversion LayersJournal of the Physics Society Japan, 1971
- Hot Electron Effects and Saturation Velocities in Silicon Inversion LayersJournal of Applied Physics, 1970
- An MOS-oriented investigation of effective mobility theorySolid-State Electronics, 1968
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955