Monte Carlo particle simulation of a GaAs short-channel MESFET
- 6 January 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (1) , 20-21
- https://doi.org/10.1049/el:19830014
Abstract
A Monte Carlo particle simulation of a 0.25 μm-long gate (and 0.25 μm-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of gm and Idss of 643 mS/mm and 5.35 mA/20 μm were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.Keywords
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