Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison
- 1 September 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 118 (1-4) , 128-132
- https://doi.org/10.1016/0168-583x(95)01489-6
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Computer studies of the reflection of light ions from solidsPublished by Elsevier ,2002
- Close encounter processes in Monte Carlo simulations of ion channelingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
- Light- and heavy-ion channeling profiles in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Computer simulation of channeling in single crystalsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Axial dechannelingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Multiple scattering of MeV light ions through thin amorphous anodic Silayers formed on silicon single crystalsPhysical Review B, 1979
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974
- Calculations on axial dechannelingRadiation Effects, 1972
- Monte Carlo Channeling CalculationsPhysical Review B, 1971
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968