Characteristics of static induction transistors: Effects of series resistance
- 1 July 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (7) , 761-767
- https://doi.org/10.1109/T-ED.1978.19167
Abstract
It is established experimentally that the I-V characteristics of a static induction transistor (SIT) and their temperature dependence are consistent with a major current transport mechanism of majority-carrier injection control plus the effect of series channel resistance. The I-V characteristics follow an exponential behavior in the low-current region and change to approximately a linear-or square-law relation in the high-current region where the negative feedback effect of the series channel resistance becomes pronounced. That the series channel resistance is small in the SIT and satisfies the condition that the product of series channel resistance and dc intrinsic transconductanee is less than unity is experimentally verified. The voltage amplification factor in the SIT has been confirmed to be almost constant for wide variations of drain current and ambient temperature.Keywords
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