High voltage electron microscope study of defects in silicon
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 606-611
- https://doi.org/10.1016/0378-4363(83)90314-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Defects in electron-irradiated germaniumPhilosophical Magazine, 1976
- Method for Determining Silicon Diffusion Coefficients in Silicon and in Some Silicon CompoundsPhysical Review Letters, 1966
- The elastic energies of symmetrical dislocation loopsPhilosophical Magazine, 1965
- New Method for Treating Lattice Point Defects in Covalent CrystalsPhysical Review B, 1965
- Theoretical calculations of the enthalpies and entropies of diffusion and vacancy formation in semiconductorsJournal of Physics and Chemistry of Solids, 1961