Indirect plasma deposition of silicon dioxide

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Abstract
Silicon dioxide layers were formed by reacting silane with oxygen. The oxygen was ionized in an rf discharge chamber physically removed from the deposition zone. The excited oxygen species, which left the ionization chamber, reacted with silane regardless of the temperature, during deposition, to be chosen as an important parameter and at the same time avoided the adverse effects of placing the sample within an rf discharge. MOS capacitors were formed on silicon substrates and their electrical properties were evaluated by capacitance-voltage (C-V) measurements. An analysis of the quasistatic C-V data indicates a midgap density of surface states NSS = 2×1011 cm−2eV−1 for SiO2 layers deposited at 300 °C.

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