Surface and interface properties of Hg1−xMnxSe

1 January 1985

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 3 (1) , 124-127
https://doi.org/10.1116/1.573182

Abstract

Synchrotron radiation photoemission studies of Hg1−xMnxSe single crystals for x≤0.15 show the cleaved semiconductor surfaces to be stable in ultrahigh vacuum with no loss of Hg or change in surface stoichiometry oberved with time. Comparison with results for HgSe samples points out a well defined Mn-derived emission feature centered 4.1 eV below the Fermi level EF with a full width at half maximum (FWHM) of 1.1 eV. Analysis of the photoemission cross section demonstrates that the corresponding states have dominant Mn 3d character and are therefore responsible for the semiconductor magnetotransport and magneto-optical properties. Preliminary studies of Hg1−xMnxSe–Al interface formation show that the semiconductor surface is depleted of both Hg and Mn upon metal deposition, while an Al–Se reacted phase is established as the true microscopic interface at the Hg1−xMnxSe–Al junction.

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