Static RAMs with microwatt data retention capability
- 1 October 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 15 (5) , 826-831
- https://doi.org/10.1109/jssc.1980.1051478
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Battery backup circuits for memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- A 4K static bipolar TTL RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978
- A 4K static clocked and nonclocked RAM designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- A 5 V-only 4-K static RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Dependence of resistivity on the doping level of polycrystalline siliconJournal of Applied Physics, 1975
- Ion-implanted complementary MOS transistors in low-voltage circuitsIEEE Journal of Solid-State Circuits, 1972
- Low level currents in insulated gate field effect transistorsSolid-State Electronics, 1972
- Subthreshold drain leakage currents in MOS field-effect transistorsIEEE Transactions on Electron Devices, 1972