Microwave silicon Schottky-barrier field-effect transistor
- 23 August 1968
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 4 (17) , 362-363
- https://doi.org/10.1049/el:19680284
Abstract
Schottky-barrier field-effect transistors have been realised in silicon epitaxial films on high-resistivity silicon substrates. The 1 μm wide gates are produced by projection-masking techniques. The maximum transconductances observed are 42 mA/V per mm gate length; the maximum frequency of oscillation fmax was 8 GHz.Keywords
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