Effect of thermionic electron emission from the active layer on the internal quantum efficiency of InGaAsP lasers operating at 1.3 μm
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 30 (2) , 219-221
- https://doi.org/10.1109/3.283762
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Novel technique for determining internal loss of individual semiconductor lasersElectronics Letters, 1992