Nanostructure patterns written in III–V semiconductors by an atomic force microscope
- 7 April 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (14) , 1855-1857
- https://doi.org/10.1063/1.118712
Abstract
An atomic force microscope has been used to pattern nanometer-scale features in III–V semiconductors by cutting through a thin surface layer of a different semiconductor, which is then used as an etch mask. Cuts up to 10 nm deep, which pass through 2–5 nm thick epilayers of both GaSb and InSb, have been formed. Lines as narrow as 20 and 2 nm deep have been made. Selective etchants and a 5 nm GaSb etch mask are used to transfer patterns into an InAs epilayer. The results are promising for applications requiring trench isolation, such as quantum wires and in-plane gated structures.Keywords
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