An Investigation of the Heteroepitaxial Growth of Beta—silicon Carbide Thin Filmson Silicon Substrates
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Steps on (001) silicon surfacesJournal of Vacuum Science & Technology B, 1987
- Transmission electron microscopy of process-induced defects in β-SiC thin filmsJournal of Materials Research, 1986
- Si(001)-2×1 Single-Domain Structure Obtained by High Temperature AnnealingJapanese Journal of Applied Physics, 1986
- Epitaxial growth of β-SiC single crystals by successive two-step CVDJournal of Crystal Growth, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- A simple method for the determination of structure-factor phase relationships and crystal polarity using electron diffractionJournal of Applied Crystallography, 1982
- Breakdown field in vapor-grown silicon carbide p-n junctionsJournal of Applied Physics, 1977
- Saturated electron drift velocity in 6H silicon carbideJournal of Applied Physics, 1977
- Hot electron microwave conductivity of wide bandgap semiconductorsSolid-State Electronics, 1976
- Polarity of ZnO Crystal (III) Inversion Twin Boundaries on {101̄0}Japanese Journal of Applied Physics, 1971