Equilibrium Vacancies in Te-Doped GaAs Studied by Positron Annihilation

• 1 December 1997
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 258-263, 905-910
• https://doi.org/10.4028/www.scientific.net/msf.258-263.905

Abstract

Keywords

• EQUILIBRIUM DEFECTS
• GA VACANCY
• GAAS
• POSITRON ANNIHILATION
• POST-GROWTH ANNEALING