Application of Copper-Decoration Method to Characterize As-Grown Czochralski-Silicon
- 1 April 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (4B) , L439
- https://doi.org/10.1143/jjap.31.l439
Abstract
Czochralski-silicon wafers having ring-likely distributed stacking faults (ring-SFs) were investigated by means of copper decoration. The size and density of copper precipitates were measured by X-ray transmission topography and preferential etching. In the outer region of the ring-SFs, electrical properties (recombination lifetime of minority carriers, the dielectric breakdown strength) were found to be excellent. On the other hand, in the inner region of the ring-SFs electrical properties were degraded. These phenomena may be explained by the large defects which remain in the center region of the ingot.Keywords
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