Intrinsic lineshape and FM response of modulated semiconductor lasers

12 September 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (19) , 849-850
https://doi.org/10.1049/el:19850599

Abstract

A new method for measuring the FM response and the intrinsic linewidth of modulated semiconductor lasers is reported. No additional stochastic line broadening has been observed for direct modulation of buried-heterostructure 1.3 μm lasers with modulation depths of less than 20%. Thus FSK systems employing heterodyne detection are expected not to exhibit any additional phase noise penalty due to direct current modulation.

Keywords

STOCHASTIC LINE BROADENING
DIRECT MODULATION
PHASE NOISE
HETERODYNE DETECTION
MEASUREMENT METHOD
FM RESPONSE
INTRINSIC LINEWIDTH
MODULATED SEMICONDUCTOR LASERS
BH LASERS
FSK SYSTEMS
MODULATION DEPTHS
1.3 MICRONS

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