The Growth and Characterization of HgTe Epitaxial Layers Made by Organometallic Epitaxy

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Abstract
Mercury telluride layers have been grown on cadmium telluride substrates, by the reaction of diethyltelluride and mercury. Typical growth rates, at 415°C, are 3.3 μm/h. Resulting films had an apparent Hall mobility of at liquid nitrogen temperature, and an effective electron concentration of . The growth and electrical characteristics of these films are described in this paper.