Nanometer-scale field-induced oxidation of Si(111):H by a conducting-probe scanning force microscope: Doping dependence and kinetics

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Abstract
Hydrogen-terminated Si(111) was patterned on the nanometer scale by field-induced oxidation using a biased conducting-probe scanning force microscope. The kinetics of oxide growth as well as its dependence on doping are investigated. Field-induced oxidation is observed for voltages exceeding a doping dependent threshold above which oxidation kinetics follows a power law.