Quantum Mechanical Size Effect Modulation Light Sources– A New Field Effect Semiconductor Laser or Light Emitting Device
- 1 January 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (1A) , L22
- https://doi.org/10.1143/jjap.22.l22
Abstract
A new field effect semiconductor laser or light emitting device is proposed and analysed, in which the photon emission rate is modulated by the gate voltage mainly through changes in spatial distributions of the carriers. The switching speed in the device is expected to be free from recombination lifetime limitation in specific operation modes.Keywords
This publication has 5 references indexed in Scilit:
- Velocity-Modulation Transistor (VMT) –A New Field-Effect Transistor ConceptJapanese Journal of Applied Physics, 1982
- Modelocking of Semiconductor Laser DiodesJapanese Journal of Applied Physics, 1981
- Intracavity loss modulation of GaInAsP diode lasersApplied Physics Letters, 1981
- Electrical and Optical Properties of Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972
- Electron States in Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972