Some unique aspects on ThO2-doped SnO2 exposed to H2 gas
- 1 February 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (2) , 1145-1146
- https://doi.org/10.1063/1.326054
Abstract
In ThO2‐doped SnO2 exposed to H2 gas, the remarkable phenomenon like the increase of sample resistivity has been found in spite of n‐type semiconductors. This phenomenon depends on the gas concentration, the sample temperature, and also the history of the samples. In samples sintered at 600 °C, it appears remarkably at the sample temperature below 240 °C and above 250 ppm of the gas concentration.This publication has 5 references indexed in Scilit:
- Propane Gas Detector Using SnO2 Doped with Nb, V, Ti, or MoJournal of the Electrochemical Society, 1978
- Oscillation phenomenon in ThO2-doped SnO2 exposed to CO gasApplied Physics Letters, 1978
- On the Catalysis of the Transition Metal OxidesJournal of Synthetic Organic Chemistry, Japan, 1958
- Hydrogen as a Donor in Zinc OxideThe Journal of Chemical Physics, 1956
- Study on ZnO-Cr2O3 Catalyst. I Electrical Conductivity of Zinc Oxide in Oxygen and HydrogenBulletin of the Chemical Society of Japan, 1956