Raman monitoring of semiconductor growth

Publisher Website
Google Scholar
Abstract
In this paper it is demonstrated that Raman spectroscopy can be used for in situ online monitoring of semiconductor layer growth. For this purpose an ultra‐high‐vacuum chamber was designed to suit molecular beam epitaxial growth as well as simultaneous optical measurements utilizing a multichannel detection Raman system. As a result Raman spectra can be taken while growth progresses. As shown by the example of InSb growth, they provide information on the interface chemistry, crystal quality of the growing layer, and the growth mode as well.