Low-noise HEMT fabricated by MOCVD
- 14 February 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (4) , 125-126
- https://doi.org/10.1049/el:19850088
Abstract
Low-noise HEMTs with GaAlAs/GaAs heterostructures have been successfully fabricated using metal organic chemical vapour deposition (MOCVD). Hall mobilities of the two-dimensional electron gas at the interface are 8000 and 148 000 cm2/Vs at 300 and 77 K. These are comparable to the best results yet reported using molecular beam epitaxy (MBE). The HEMTs fabricated by MOCVD with a 0.8 μm-long gate have exhibited a noise figure of 1.47 dB with 9 dB associated gain at 12 GHz and transconductance of 190 mS/mm.Keywords
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