A New Chemical Method of Preparing Semiconducting MoX2 (X=S, Se) Thin Films
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12R) , 3484-3487
- https://doi.org/10.1143/jjap.30.3484
Abstract
We report a new chemical method for preparing semiconducting MoX2 (X=S, Se) thin films on glass substrates. For MoS2 deposition, an ammine complex of Mo (VI) ions, thioacetamide and hydrazine hydrate solutions was used, while for MoSe2 films, sodium selenosulphate solution replaced thioacetamide, and other reagents remained unchanged. Structural, optical and electrical properties of the as-deposited and annealed films have been studied.Keywords
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