Pressure and Time-Resolved Photoluminescence Studies of Mg-Doped and Undoped GaN
- 1 November 1996
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 198 (1) , 235-241
- https://doi.org/10.1002/pssb.2221980131
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substratesSolid State Communications, 1996
- Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- On p-type doping in GaN—acceptor binding energiesApplied Physics Letters, 1995
- Photoluminescence from wurtzite GaN under hydrostatic pressureApplied Physics Letters, 1995
- Pressure-dependent photoluminescence study of wurtzite GaNApplied Physics Letters, 1995
- Emerging gallium nitride based devicesProceedings of the IEEE, 1995
- Pressure studies of gallium nitride: Crystal growth and fundamental electronic propertiesPhysical Review B, 1992
- Donor—acceptor pairs in semiconductorsPhysica Status Solidi (b), 1968