Grain growth in polycrystalline silicon
- 1 September 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (5) , 445-446
- https://doi.org/10.1063/1.90372
Abstract
A grain‐growth study of polycrystalline silicon having small dendritic crystallites obtained by cracking SiHCl3 on a hot filament has been carried out in the temperature range 1275–1375 °C. It has been observed that (1) the grain growth in the polycrystalline silicon is due to a two‐dimensional motion of grain boundaries in a plane perpendicular to the grain axis, (2) the size‐limited grain‐growth law is obeyed, and (3) the activation energy of grain growth in polycrystalline silicon is 4.62±0.23 eV, which is nearly the same as the activation energy of the diffusion of Si31 in silicon.Keywords
This publication has 1 reference indexed in Scilit:
- Recrystallization processes in polycrystalline siliconApplied Physics Letters, 1975