Analysis of single Si atoms deposited on the Si(111)7×7 surface
- 28 July 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 369 (1-2) , 73-78
- https://doi.org/10.1016/s0040-6090(00)00838-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Site-Specific Displacement of Si Adatoms on Si(111)-Physical Review Letters, 1997
- Layer-by-layer atomic manipulation on Si(111)-7×7 surfaceApplied Physics Letters, 1996
- Deposition and subsequent removal of single Si atoms on the Si(111)-7×7 surface by a scanning tunneling microscopeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Single-atom manipulation on the Si(111)7 × 7 surface by the scanning tunneling microscope (STM)Surface Science, 1993
- Site-specific measurement of adatom binding energy differences by atom extraction with the STMPhysical Review Letters, 1993
- Fabrication of Atomic-Scale Structures on Si(111)-7×7 Using a Scanning Tunneling Microscope (STM)Japanese Journal of Applied Physics, 1992
- Ab initiotheory of the Si(111)-(7×7) surface reconstruction: A challenge for massively parallel computationPhysical Review Letters, 1992
- Field-Induced Nanometer- to Atomic-Scale Manipulation of Silicon Surfaces with the STMScience, 1991
- Scanning tunneling microscopy study of low-temperature epitaxial growth of silicon on Si(111)-(7×7)Journal of Vacuum Science & Technology A, 1989
- Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffractionSurface Science, 1985