Abstract
For many decades, surface scientists have been concerned with the details of the physics and chemistry of microscopic states at surfaces and interfaces. Devices, on the other hand, depend upon the actual transport properties of carriers along the interface, which measure macroscopic properties of the interface by averaging over the entire ensemble of electrons involved in the conduction process. Transport is sensitive to the global properties at the interface, such as interface roughness, defect scatterers, or periodic potentials. Only recently have constrained dimensional systems allowed one to begin to study discrete state properties of the interface.

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