Morphological modifications during selective growth of InP around cylindrical and parallelepiped mesas
- 31 December 1994
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 28 (1-3) , 179-182
- https://doi.org/10.1016/0921-5107(94)90042-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Fabrication of 1.5 μm optically pumped
Ga In As P InP vertical-cavity surface-emitting lasersMaterials Science and Engineering: B, 1994 - High-reflective 1.5 μm GaInAsP/InP Bragg reflectors grown by metal organic vapor phase epitaxyMaterials Science and Engineering: B, 1994
- Increased modulation bandwidth up to 20 GHz of a detuned-loaded DBR laserIEEE Photonics Technology Letters, 1994
- Observation of growth patterns during atmospheric pressure metalorganic vapor phase epitaxy regrowth of InP around etched mesasJournal of Crystal Growth, 1993
- An investigation on hydride VPE growth and properties of semi-insulating InP:FeJournal of Electronic Materials, 1990
- Regrowth of Semi‐Insulating InP around Etched Mesas Using Hydride Vapor Phase EpitaxyJournal of the Electrochemical Society, 1990