High-power coupled-multiple-stripe phase-locked injection laser
- 15 February 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (4) , 259-261
- https://doi.org/10.1063/1.90773
Abstract
A semiconductor injection device consisting of 10 periodically spaced filaments coupled by curved waveguide sections has been demonstrated. This coupled‐multiple‐stripe (CMS) laser produces a phase‐locked TE polarized beam with a linear powerd–vs–pumping‐current characteristic up to 0.9 W/facet and a beam divergence of less than ≈4° along the p‐n junction plane in pulsed operation at room temperature. The threshold is 400 mA and differential quantum efficiencies of 65% are observed.Keywords
This publication has 9 references indexed in Scilit:
- Phase-locked semiconductor laser arrayApplied Physics Letters, 1978
- Beam scanning and wavelength modulation with branching waveguide stripe injection lasersApplied Physics Letters, 1978
- Curved stripe GaAs : GaAlAs diode lasers and waveguidesApplied Physics Letters, 1978
- Injection laser sources for fiber optic communicationsFiber and Integrated Optics, 1978
- Semiconductor Lasers with Bent Guide of Planar StructureJapanese Journal of Applied Physics, 1977
- Lasing Characteristics of Very Narrow Planar Stripe LasersJapanese Journal of Applied Physics, 1977
- Spatially coherent radiation from an array of GaAs lasersApplied Physics Letters, 1975
- OPTICAL COUPLING OF ADJACENT STRIPE-GEOMETRY JUNCTION LASERSApplied Physics Letters, 1970
- External cavity coupling and phase locking of gallium arsenide injection lasersIEEE Journal of Quantum Electronics, 1968