Realizing a stable magnetic double-well potential on an atom chip
Preprint
- 14 March 2005
Abstract
We discuss design considerations and the realization of a magnetic double-well potential on an atom chip using current-carrying wires. Stability requirements for the trapping potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms.Keywords
All Related Versions
- Version 1, 2005-03-14, ArXiv
- Published version: The European Physical Journal D, 35 (1), 141.
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