Improved cathodoluminescence properties of GaAs/Al0.3Ga0.7As tilted T-shaped quantum wires fabricated on (111)B facet by glancing-angle molecular beam epitaxy

Abstract
GaAs/Al0.3Ga0.7As tilted T-shaped quantum wires (T-QWRs) were fabricated by growing Al0.3Ga0.7As/GaAs (well thickness of GaAs Lw=4.4 nm) on a (111)B facet plane that was formed when a GaAs/Al0.3Ga0.7As multi-quantum well (MQW) layer (Lw=4.5 nm) was grown on a reverse-mesa etched GaAs(100) substrate by glancing-angle molecular beam epitaxy (GA-MBE). Growth conditions of the tilted T-QWR were optimized, and full width at half-maximum (FWHM) of a cathodoluminescence (CL) peak from the tilted T-QWRs was reduced down to 19 meV at 78 K, which is about one-third of that (61 meV) of previous GaAs/Al0.3Ga0.7As tilted T-QWRs.

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